论文标题
使用飞行时间的动量显微镜和硬X射线的结构分析：状态和前景
Structure Analysis using Time-of-Flight Momentum Microscopy with Hard X-rays: Status and Prospects
论文作者
论文摘要
X射线光电子衍射（XPD）已发展为固体结构分析的强大技术。将技术扩展到硬X射线范围（HXPD）可访问真正的批量信息。在这里，我们使用新型的全场成像技术提供了有关HXPD实验的状态报告：飞行时间动量显微镜（TOF-MM）。 TOF-MM的一种特殊变体能够记录高动能（最高> 7keV）和视野扩大。我们提出了针对高动能的应用。对于NBSE2，SRTIO3中的立方至四方过渡和外延GAAS膜中的锌 - 蓝色结构，HXPD的强部位特异性被例证。 Bloch-Wave计算与实验相当一致，并揭示了宿主晶格中发射极位点的指纹签名。我们在两个半导体（GAAS中的MN和SI中的TE）中显示了掺杂位点的分析。硬X射线ARPES加上核心级HXPD启用消除竖琴图中印有强的衍射标志。
X-ray photoelectron diffraction (XPD) has developed into a powerful technique for the structural analysis of solids. Extension of the technique into the hard-X-ray range (hXPD) gives access to true bulk information. Here we give a status report on hXPD experiments using a novel full-field imaging technique: Time-of-flight momentum microscopy (ToF-MM). A special variant of ToF-MM is capable of recording high kinetic energies (up to >7keV) and enlarged k-fields-of-view. We present applications that are specific for high kinetic energies. The strong site specificity of hXPD is exemplified for NbSe2, the cubic-to-tetragonal transition in SrTiO3 and the zinc-blende structure in epitaxial GaAs films. Bloch-wave calculations show a very good agreement with experiment and reveal fingerprint-like signatures of emitter sites in host lattices. We show a dopant-site analysis in two semiconductors (Mn in GaAs and Te in Si). Hard-X-ray ARPES plus core-level hXPD enable eliminating the strong diffraction signature imprinted in HARPES maps.
