论文标题
单层WSE2晶体管中自旋和山谷效应的所有电控制和温度依赖性
All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors
论文作者
论文摘要
基于重金属的二维范德华材料具有较大的耦合自旋和山谷大厅效应（SVHE），该效应可能在旋转和山谷中使用。 SVHE的光学测量很大程度上是在30 K以下进行的，并且了解可以发电的SVHE诱导的自旋/山谷极化是有限的。在这里，我们研究了单层P型钨液（WSE2）中的SVHE。 Kerr旋转（KR）的测量显示了SVHE在不同温度下的空间分布，其持久性高达160 K，并且可以通过栅极和排水偏置进行电气调节。旋转/山谷的漂移和扩散模型以及反射光谱数据用于解释KR数据，并预测在160 K下的较低旋转/山谷寿命为4.1 ns低于90 K和0.26 ns。沿边缘的单位长度和每单位长度的过量旋转和山谷在45 K时为每微米109，对应于45 K，对应于旋转/Valley的旋转/Valley Edge polarly polarligation 6％。这些结果是SVHE实际使用的重要步骤。
Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical measurements of the SVHE have largely been performed below 30 K and understanding of the SVHE-induced spin/valley polarizations that can be electrically generated is limited. Here, we study the SVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR) measurements show the spatial distribution of the SVHE at different temperatures, its persistence up to 160 K, and that it can be electrically modulated via gate and drain bias. A spin/valley drift and diffusion model together with reflection spectra data is used to interpret the KR data and predict a lower-bound spin/valley lifetime of 4.1 ns below 90 K and 0.26 ns at 160 K. The excess spin and valley per unit length along the edge is calculated to be 109 per micron at 45 K, which corresponds to a spin/valley polarization on the edge of 6%. These results are important steps towards practical use of the SVHE.
