论文标题
通过空腔增强的发射
Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity Enhanced Emission
论文作者
论文摘要
六角形硝酸硼(HBN)中带负电荷的硼空缺($ v_b^ - $)表现出广泛的发射光谱,这是由于强烈的电子偶联和电子状态的Jahn-Teller混合。因此,$ v_b^ - $的零孔线线(ZPL)的直接测量仍然难以捉摸。在这里,我们通过将HBN层与High-Q纳米孔腔耦合,测量室温ZPL波长为$ 773 \ pm2 $ nm。由于对空腔模式的波长进行了调整,因此我们观察到明显的强度共振,表明耦合到$ v_b^ - $。我们的观察结果与$ v_b^ - $排放的空间重新分布是一致的。通过空间分辨的测量结果显示,纳米梁中点处的percell效应最大值与空腔模式的光场分布相一致。我们的结果与理论计算非常吻合,开为使用$ v_b^ - $作为腔体旋转式接口的方式开辟了道路。
Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to $V_B^-$. Our observations are consistent with the spatial redistribution of $V_B^-$ emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using $V_B^-$ as cavity spin-photon interfaces.