论文标题
使用选择性区域生长的超导体 - 触发器杂种结构的栅极可调transmon
Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
论文作者
论文摘要
我们提出了基于平面INAS纳米线的栅极电压调谐传输量子置值（Gatemon），该纳米线在使用IIII-V缓冲层的高电阻率硅基板上有选择地生长。我们表明，在拆除缓冲层后，使用这些基板很容易实现，内部质量为$ 2 \ times 10^5 $的低损失超导谐振器很容易实现。我们演示了与放松时间的Gatemon设备的连贯控制和读数，$ t_ {1} \大约700 \，\ Mathrm {ns} $和Dephasing Times，$ t_2^{\ ast} {\ ast} \ \ yath \ m chansrm {ns} $和$ t} 1.3 \，\ Mathrm {μs} $。此外，我们通过分析Qubit Anharmonicity的高连接透明度为0.4-0.9 $。
We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, $T_{1}\approx 700\,\mathrm{ns}$, and dephasing times, $T_2^{\ast}\approx 20\,\mathrm{ns}$ and $T_{\mathrm{2,echo}} \approx 1.3\,\mathrm{μs}$. Further, we infer a high junction transparency of $0.4 - 0.9$ from an analysis of the qubit anharmonicity.
