论文标题
氧化铁薄膜中的自旋Seebeck效应:相变,相共存和表面磁的影响
Spin Seebeck effect in iron oxide thin films: Effects of phase transition, phase coexistence, and surface magnetism
论文作者
论文摘要
了解相变,相共存和表面磁对磁系统中纵向自旋效应(LSSE)的影响对于操纵旋转以为固定体应用的电流转换效率充电至关重要。我们的目的是通过对LSSE在氧化双相(BPIO = alpha-fe2O3 + Fe3O4)中的LSSE温度依赖性进行全面研究来阐明这些影响。与SI/BPIO/PT异质结构中的固有LSSE相比,与温度依赖性异常Nernst效应(ANE)和电阻率测量的组合相比,ANE从BPIO层的贡献可以忽略不计。在Fe3O4相的Verwey跃迁下方,BPIO/PT跨的总信号由LSSE主导。 SI/BPIO/PT和Al2O3/BPIO/PT异质结构的固有LSSE信号在Fe3O4期的VERWEY过渡周围以及Alpha-FE2O3相的抗铁磁(AFM)MORIN跃迁周围的AL2O3/PT异质结构的显着变化。发现SI/BPIO/PT的LSSE信号比AL2O3/BPIO/PT的LSSE信号大约是饱和磁化的相反趋势。与AL2O3/BPIO膜相比,磁力显微镜揭示了Si/BPIO膜的表面磁矩的较高密度,该膜强调了界面磁性在LSSE信号上的主要作用,从而解释了SI/BPIO/PT的较大LSSE。
Understanding impacts of phase transition, phase coexistence, and surface magnetism on the longitudinal spin Seebeck effect (LSSE) in a magnetic system is essential to manipulate the spin to charge current conversion efficiency for spincaloritronic applications. We aim to elucidate these effects by performing a comprehensive study of the temperature dependence of LSSE in biphase iron oxide (BPIO = alpha-Fe2O3 + Fe3O4) thin films grown on Si (100) and Al2O3 (111) substrates. A combination of temperature-dependent anomalous Nernst effect (ANE) and electrical resistivity measurements show that the contribution of ANE from the BPIO layer is negligible compared to the intrinsic LSSE in the Si/BPIO/Pt heterostructure even at room temperature. Below the Verwey transition of the Fe3O4 phase, the total signal across BPIO/Pt is dominated by the LSSE. Noticeable changes in the intrinsic LSSE signal for both Si/BPIO/Pt and Al2O3/BPIO/Pt heterostructures around the Verwey transition of the Fe3O4 phase and the antiferromagnetic (AFM) Morin transition of the alpha-Fe2O3 phase are observed. The LSSE signal for Si/BPIO/Pt is found to be almost two times greater than that for Al2O3/BPIO/Pt, an opposite trend is observed for the saturation magnetization though. Magnetic force microscopy reveals the higher density of surface magnetic moments of the Si/BPIO film compared to the Al2O3/BPIO film, which underscores a dominant role of interfacial magnetism on the LSSE signal and thereby explains the larger LSSE for Si/BPIO/Pt.