论文标题
在晶格不匹配的INP底物上生长的INAS量子量的清洁量子点接触
Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate
论文作者
论文摘要
强的自旋轨道耦合，由此产生的大$ g $因子和少量的有效质量使INAS成为诱导拓扑超导性的有吸引力的材料平台。在传导带中固定的表面费米水平可以实现高度透明的欧姆接触，而无需过多掺杂。我们研究了深井Inas二维电子气体中静电定义的量子点接触（QPC）。尽管INAS量子井和INP底物之间的晶格不匹配3.3％，但我们报告了在零磁场处的清洁QPC，最多八个明显的量化电导量。 Source-Drain DC偏置光谱验证揭示了谐波限制的潜力，并具有近5美元的MEV子带间距。我们找到了平面外$ g $ factor $ | g _ {\ perp}^*|的多体交换互动增强= 27 \ pm 1 $，而平面$ g $ factor是各向同性$ | g^*_ {x} | = | g^*_ {y} | = 12 \ pm 2 $，接近INA的批量价值。
Strong spin-orbit coupling, the resulting large $g$ factor, and small effective mass make InAs an attractive material platform for inducing topological superconductivity. The surface Fermi level pinning in the conduction band enables highly transparent ohmic contact without excessive doping. We investigate electrostatically defined quantum point contacts (QPCs) in a deep-well InAs two-dimensional electron gas. Despite the 3.3% lattice mismatch between the InAs quantum well and the InP substrate, we report clean QPCs with up to eight pronounced quantized conductance plateaus at zero magnetic field. Source-drain dc bias spectroscopy reveals a harmonic confinement potential with a nearly $5$ meV subband spacing. We find a many-body exchange interaction enhancement for the out-of-plane $g$ factor $|g_{\perp}^*| = 27 \pm 1$, whereas the in-plane $g$ factor is isotropic $|g^*_{x}| = |g^*_{y}| = 12 \pm 2$, close to the bulk value for InAs.
