论文标题
LAALO3/SRTIO3和AL/SRTIO3接口的2D电子系统的激光弧视图
A Laser-ARPES View of the 2D Electron Systems at LaAlO3/SrTiO3 and Al/SrTiO3 Interfaces
论文作者
论文摘要
我们已经测量了在Al/srtio3（al/sto）和Laalo3/srtio3（Lao/sto）接口的二维电子系统（2DES）的电子结构，它利用光光发射镜头在低光谱的范围内进行了较大的光子逃脱，以这些botecros的blotecon bepth beption boltoce bepth beption bote beptrospopopicy在低光子逃脱的光谱上可以屈服这些bunied bur buritied buried buried buried buried buried buried buried互动。我们通过改变Al层的厚度来证明对Al/sto中电子密度的可能性，并表明电子结构的演化是通过自洽的紧密结合超级电池计算很好地描述的，但与刚性频带移动模型有质量不同。我们表明，这两个2E都与纵向光学声子强烈耦合，这与以前在类似的基于STO的2DESS中的二极化基态的报道一致。调整Al/sto中的电子密度以匹配老挝/STO的电子密度并比较两个系统，我们估计内在的老挝/sto 2DES的裸露带宽度约为60 MeV，载体密度约为6 10^13 cm-2。
We have measured the electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO3 (Al/STO) and LaAlO3/SrTiO3 (LAO/STO) interfaces by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy to probe these buried interfaces. We demonstrate the possibility of tuning the electronic density in Al/STO by varying the Al layer thickness and show that the electronic structure evolution is well described by self-consistent tight binding supercell calculations, but differs qualitatively from a rigid band shift model. We show that both 2DES are strongly coupled to longitudinal optical phonons, in agreement with previous reports of a polaronic ground state in similar STO based 2DESs. Tuning the electronic density in Al/STO to match that of LAO/STO and comparing both systems, we estimate that the intrinsic LAO/STO 2DES has a bare band width of ~ 60 meV and a carrier density of ~ 6 10^13 cm-2.
