论文标题
宽带波长选择性异型异型n+-zno/n-Si光电探测器具有可变极性
Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity
论文作者
论文摘要
开发了同种型杂结n+-zno/n-Si光电探测器，根据所施加的偏置电压，证明波长选择性或宽带操作。此外，在自动化（零偏置）操作下，它通过光电流的极性控制区分了紫外线，可见和近IR（NIR）光子。光电探测器是通过N-SI上ZnO的原子层沉积（ALD）开发的，然后是电接触沉积和退火。光致发光的测量显示了硅在硅上退火ZnO的高光学质量和改善的结晶度。光电流测量作为照明波长和偏置电压的函数在零以零的紫外可见光谱范围内显示较小的负值，而在NIR光谱范围内，较高的偏置电压和高正值。对于这些测量值，我们将与ZnO的电接触视为阳极，而电动接触硅则是阴极。在负偏置电压下，该设备显示宽带操作，在整个UV-VIS-NIR上具有高光电流值。
An isotype heterojunction n+-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at self-powered (zero bias) operation, it distinguishes between UV, visible, and near IR (NIR) photons by polarity control of the photocurrent. The photodetector is developed by atomic layer deposition (ALD) of ZnO on n-Si, followed by electric contact deposition and annealing. Photoluminescence measurements reveal high optical quality and improved crystallinity of annealed ZnO on silicon. Photocurrent measurements as a function of illumination wavelength and bias voltage show small negative values in the UV-visible spectral range at zero and positive bias voltage and high positive values in the NIR spectral range. For these measurements, we consider the electric contact to ZnO as the anode and the electric contact to silicon as the cathode. At negative bias voltage, the device shows broadband operation with high photocurrent values across the UV-vis-NIR.
