论文标题
具有偏置控制的硅设备中纠缠逻辑的噪声驱动的不稳定
Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls
论文作者
论文摘要
硅中的量子位（Qubits）的质量极易容易受到半导体设备中含量为Omni呈现的噪声，原则上很难被抑制。 For a realistically sized quantum dot system based on a silicon-germanium heterostructure whose confinement is manipulated with electrical biases imposed on top electrodes, we computationally explore the noise-robustness of 2-qubit entangling operations with a focus on the controlled-X (CNOT) logic that is essential for designs of gate-based universal quantum logic circuits.通过基于电子结构计算增强的散装半导体物理学的设备仿真，我们不仅可以根据电荷强度量化单步CNOT操作的保真度降级，还讨论了与单位速度相比几乎没有速度牺牲性的设备工程的策略，这些策略可以显着增强与单位速度相比的质量牺牲性。该工作提出的设备设计和控制的详细信息可以为使用电极驱动的量子点平台确保基于硅的量子处理器的潜在努力建立罕见但实用的指南。
The quality of quantum bits (qubits) in silicon is highly vulnerable to charge noise that is omni-present in semiconductor devices and is in principle hard to be suppressed. For a realistically sized quantum dot system based on a silicon-germanium heterostructure whose confinement is manipulated with electrical biases imposed on top electrodes, we computationally explore the noise-robustness of 2-qubit entangling operations with a focus on the controlled-X (CNOT) logic that is essential for designs of gate-based universal quantum logic circuits. With device simulations based on the physics of bulk semiconductors augmented with electronic structure calculations, we not only quantify the degradation in fidelity of single-step CNOT operations with respect to the strength of charge noise, but also discuss a strategy of device engineering that can significantly enhance noise-robustness of CNOT operations with almost no sacrifice of speed compared to the single-step case. Details of device designs and controls that this work presents can establish a rare but practical guideline for potential efforts to secure silicon-based quantum processors using an electrode-driven quantum dot platform.
