论文标题
激光诱导的损伤过程的三温建模
Three-temperature modeling of laser-induced damage process in silicon
论文作者
论文摘要
研究了从FEMTO-SECENT TIME量表中硅中的激光激发。我们假设三温模型（3TM）描述了电子，孔和晶格的独特准温度的动力学。损伤阈值的数值结果不仅在定量上再现了实验结果，而且还显示出对激光脉冲持续时间的依赖。与实验数据的比较表明，电子发射和热熔化都是硅损伤的原因。我们发现电子 - 音波松弛时间对电子发射的脉冲持续时间依赖性有显着影响。
Laser excitation in silicon from femto- to pico-second time scales is studied. We assume the Three-Temperature Model (3TM) which describes the dynamics of the distinct quasi-temperatures for electrons, holes, and lattice. Numerical results for damage threshold reproduce the experimental results not only quantitatively, but qualitatively as well, showing dependence on laser pulse duration. Comparison with experimental data suggests that electron emission and thermal melting are both responsible for damage in silicon. We found that electron-phonon relaxation time has a significant effect on pulse duration dependence of electron emission.
