论文标题
使用聚焦离子束调谐载体密度和氧化物半导体的相变
Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams
论文作者
论文摘要
我们使用商业聚焦离子束（FIB）系统证明了薄膜金属氧化物，氧化锌和二氧化钒作为代表的光学特性的空间修饰。使用GA+ FIB和热退火，我们证明了带有半导体氧化锌（ZnO）的可变掺杂，可实现从10^18 cm-3到10^20 cm-3的载体浓度。使用相同的纤维而无需随后的热退火，我们对相关的半导体，二氧化钒（VO2）进行了缺陷，在局部修改其绝缘体对金属过渡（IMT）温度范围〜25度。需要掺杂或缺陷密度。
We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of doping or defect density are required.
