论文标题
940 nm藻类分布式bragg反射器的整体整合在散装GE基板上
Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates
论文作者
论文摘要
高质量的940 nm al $ _x $ ga $ _ {1-x} $作为n型分布式bragg反射器（DBR）成功地单层次生长在CUT（100）基板上。 GE-DBR的反射率光谱与传统的散装GAAS底物生长的反射率光谱相当，并且具有平稳的形态，合理的周期性和均匀性。这些结果强烈支持VCSEL的增长和制造，用于更可扩展的大量GE底物，用于大规模生产基于藻类的VCSEL。
High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology, reasonable periodicity and uniformity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for large scale production of AlGaAs-based VCSELs.
