论文标题
石墨烯中的电荷密度波接近效应
Charge-Density-Wave Proximity Effects in Graphene
论文作者
论文摘要
某些分层的过渡金属二分裂元素（TMDC）（例如1T-TAS2）在不同温度下显示了丰富的电荷密度波（CDW）相，并且已经广泛研究了其原子结构和电子电导。但是，尚未研究与其他电子材料集成的CDW系统的性能。在这里，我们首次将TMDC的CDW特性纳入了石墨烯的电子传输中。在CDW相跃迁期间，在本研究中使用的石墨烯样品中观察到与TMDC中相关疾病形成密切相关的异常转运行为。特别是，相称的CDW相形成具有潜在波动的周期性电荷分布，因此构成了相关的带电杂质，从而降低了电阻率并增强了石墨烯中的载流子迁移率。这里演示的CDW格雷烯异质结构系统为控制石墨烯的温度依赖性载体迁移率和电阻率铺平了道路，并开发了新型功能电子设备（例如基于石墨烯的传感器和存储器设备）。
Certain layered transition metal dichalcogenides (TMDCs), such as 1T-TaS2, show a rich collection of charge density wave (CDW) phases at different temperatures, and their atomic structures and electron conductions have been widely studied. However, the properties of CDW systems that are integrated with other electronic materials have not yet been investigated. Here, we incorporate the CDW properties of TMDCs into the electronic transport of graphene for the first time. During CDW phase transitions, anomalous transport behaviors that are closely related to the formation of correlated disorder in TMDCs were observed in the graphene sample used in this study. In particular, the commensurate CDW phase forms a periodic charge distribution with potential fluctuations, and thus constitutes correlated charged impurities, which decreases resistivity and enhances carrier mobility in graphene. The CDW-graphene heterostructure system demonstrated here paves the way to controlling the temperature-dependent carrier mobility and resistivity of graphene and to developing novel functional electronic devices such as graphene-based sensors and memory devices.
