论文标题
弹道式排水状态中宽带隙半导体的光谱热传播阻力
Spectral Thermal Spreading Resistance of Wide Bandgap Semiconductors in Ballistic-Diffusive Regime
论文作者
论文摘要
为了制定宽带盖（WBG）半导体设备的有效热管理策略，必须清楚地了解设备内的热传输过程并准确预测连接温度。在本文中，我们将声子蒙特卡洛（MC）方法与各种典型WBG半导体的声子分散（包括GAN，SIC，SIC，ALN和\ CE {β-GA_2O_3}）一起研究，以研究弹道 - 避免措施中的热扩散电阻。已经发现，与基于法律的预测相比，弹道效应引起的热阻力的增加与不同的声子分散剂密切相关。基于在灰色中等近似值和分散MC的结果下推导的模型，我们获得了一个热电阻模型，该模型可以很好地解决热扩散和弹道效应的问题以及声子分散的影响。该模型可以很容易地与基于FEM的热分析结合并应用于不同材料。本文可以更清楚地了解声子分散对热传输过程的影响，并且对于预测连接温度以及为WBG半导体设备的热管理策略的制定而言，这可能是有用的。
To develop efficient thermal management strategies for wide bandgap (WBG) semiconductor devices, it is essential to have a clear understanding of the heat transport process within the device and accurately predict the junction temperature. In this paper, we used the phonon Monte Carlo (MC) method with the phonon dispersion of various typical WBG semiconductors, including GaN, SiC, AlN, and \ce{β-Ga_2O_3}, to investigate the thermal spreading resistance in a ballistic-diffusive regime. It was found that when compared with Fourier's law-based predictions, the increase in the thermal resistance caused by ballistic effects was strongly related to different phonon dispersions. Based on the model deduced under the gray-medium approximation and the results of dispersion MC, we obtained a thermal resistance model that can well address the issues of thermal spreading and ballistic effects, and the influences of phonon dispersion. The model can be easily coupled with FEM based thermal analysis and applied to different materials. This paper can provide a clearer understanding of the influences of phonon dispersion on the thermal transport process, and it can be useful for the prediction of junction temperatures and the development of thermal management strategies for WBG semiconductor devices.
