论文标题

点按需集成量子记忆

On-demand Integrated Quantum Memory for Polarization Qubits

论文作者

Zhu, Tian-Xiang, Liu, Chao, Jin, Ming, Su, Ming-Xu, Liu, Yu-Ping, Li, Wen-Juan, Ye, Yang, Zhou, Zong-Quan, Li, Chuan-Feng, Guo, Guang-Can

论文摘要

光子极化量子位广泛用于量子计算和量子通信中,由于传输的鲁棒性和易于操作。极化量子位的集成量子存储器是大规模集成量子网络的基本构建块。但是,由于固体的各向异性吸收和微观结构的极化依赖性特征,因此在集成量子记忆中存储极化量值是一个长期存在的挑战。在这里,我们使用在151EU3+:Y2SIO5晶体中制造的抑郁层覆盖波导,证明了极化量子位的可靠按需量子记忆。 Y2SIO5晶体中的位点2 151EU3+离子为任意极化状态提供了近似均匀的吸收,并开发了新的泵序列来制备宽带和增强的吸收曲线。对于量子存储过程,获得了99.4 \ pm0.6%的保真度,每个脉冲输入为0.32光子,以及10 MHz的存储带宽。这种可靠的量量子存储器用于极化量子位,揭示了在构造综合量子网络的构建中使用的潜力。

Photonic polarization qubits are widely used in quantum computation and quantum communication due to the robustness in transmission and the easy qubit manipulation. An integrated quantum memory for polarization qubits is a fundamental building block for large-scale integrated quantum networks. However, on-demand storing polarization qubits in an integrated quantum memory is a long-standing challenge due to the anisotropic absorption of solids and the polarization-dependent features of microstructures. Here we demonstrate a reliable on-demand quantum memory for polarization qubits, using a depressed-cladding waveguide fabricated in a 151Eu3+: Y2SiO5 crystal. The site-2 151Eu3+ ions in Y2SiO5 crystal provides a near-uniform absorption for arbitrary polarization states and a new pump sequence is developed to prepare a wideband and enhanced absorption profile. A fidelity of 99.4\pm0.6% is obtained for the qubit storage process with an input of 0.32 photons per pulse, together with a storage bandwidth of 10 MHz. This reliable integrated quantum memory for polarization qubits reveals the potential for use in the construction of integrated quantum networks.

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