论文标题
LAO/KTO（110）和LAO/KTO（111）接口的金属绝缘体过渡的纳米级控制
Nanoscale control of the metal-insulator transition at LAO/KTO (110) and LAO/KTO (111) interfaces
论文作者
论文摘要
KTAO3（KTO）（110）和（111）界面上超导性的最新报道引起了人们的浓厚兴趣，这是由于相对较高的临界温度以及其他将该系统与更广泛研究的SRTIO3（STO）基于基于的异质结构区分开的特性。在这里，我们报告了LAALO3/KTO（110）和（111）接口的金属到绝缘体过渡的纳米级控制。使用以前针对基于STO的异质结构开发的两种不同的方法创建设备：（1）导电原子力显微镜光刻和（2）超低电压电子梁光刻。在低温下，基于KTO的设备显示出可通过施加后门调谐的超导性。纳米线设备显示单电子晶体管（SET）行为。这些在基于KTO的异质结构中创建纳米级设备的可重构方法为研究超导性机制以及量子设备的开发提供了新的途径，这些量子设备结合了强大的旋转轨道相互作用，超导行为和纳米级维度。
Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here we report nanoscale control of the metal-to-insulator transition at the LaAlO3/KTO (110) and (111) interfaces. Devices are created using two distinct methods previously developed for STO-based heterostructures: (1) conductive atomic-force microscopy lithography and (2) ultra-low-voltage electron-beam lithography. At low temperatures, KTO-based devices show superconductivity that is tunable by an applied back gate. A nanowire device shows single-electron-transistor (SET) behavior. These reconfigurable methods of creating nanoscale devices in KTO-based heterostructures offer new avenues for investigating mechanisms of superconductivity as well as development of quantum devices that incorporate strong spin-orbit interactions, superconducting behavior, and nanoscale dimensions.
