论文标题
将单层AG作为大差距2D半导体，其动量解决了激发态
Confined monolayer Ag as a large gap 2D semiconductor and its momentum resolved excited states
论文作者
论文摘要
2D材料具有吸引人的量子现象，与它们的批量不同。最近，由元素原子组成的外延合成的晶圆尺度2D金属不仅吸引了其潜在应用，而且吸引了诸如超导性等外来量子效应。通过使用时间分辨和角度分辨光发射光谱（ARPES）绘制动量分辨的电子状态，我们揭示了限制在Biyerer Graphene和SIC之间的单层Ag是一个较大的差距（> 1 eV）2D半导体，与GW纠正的密度密度功能理论一致。测得的价带分散匹配DFT-GW准粒子带。但是，传导带分散剂显示出异常的有效质量为2.4 m0。讨论了明显质量中这种大型增强的可能机制。
2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also for exotic quantum effects such as superconductivity. By mapping momentum-resolved electronic states using time-resolved and angle-resolved photoemission spectroscopy (ARPES), we reveal that monolayer Ag confined between bilayer graphene and SiC is a large gap (> 1 eV) 2D semiconductor, consistent with GW-corrected density functional theory. The measured valence band dispersion matches the DFT-GW quasiparticle band. However, the conduction band dispersion shows an anomalously large effective mass of 2.4 m0. Possible mechanisms for this large enhancement in the apparent mass are discussed.
