论文标题
双向电流转化率达到1%的薄膜锂尼贝特的效率1%
Bidirectional electro-optic conversion reaching 1% efficiency with thin-film lithium niobate
论文作者
论文摘要
超导腔电磁孔(EO)提出了一条有希望的途径,可以通过光网络连贯地转换微波炉和光学光子并通过长距离通过光网络在超导电路之间分布量子纠缠。高EO转化效率需要具有强大效果和出色的光学透明度的转导材料。薄膜硅锂(TFLN)提供了这些期望的特征,但是到目前为止,仅在$ 10^{ - 5} $的效率下提供了单向转换,并在低温温度下受到其突出的光致电(PR)效应的影响很大。在这里,我们表明,通过减轻PR效应和相关的电荷筛分效果,可以通过数量级来提高设备的转换效率,同时保持稳定的低温操作,从而证明转换双向性并准确地量化了芯片效率。使用基于TFLN-sapphire底物的优化整体整合超导EO设备,实现了1.02%的芯片转换效率(内部效率为15.2%)。我们的演示表明,随着设备的进一步改进,TFLN可以达到统一的内部转换效率。
Superconducting cavity electro-optics (EO) presents a promising route to coherently convert microwave and optical photons and distribute quantum entanglement between superconducting circuits over long-distance through an optical network. High EO conversion efficiency demands transduction materials with strong Pockels effect and excellent optical transparency. Thin-film Lithium Niobate (TFLN) offers these desired characteristics however so far has only delivered unidirectional conversion with efficiencies on the order of $10^{-5}$, largely impacted by its prominent photorefractive (PR) effect at cryogenic temperatures. Here we show that, by mitigating the PR effect and associated charge-screening effect, the device's conversion efficiency can be enhanced by orders of magnitude while maintaining stable cryogenic operation, thus allowing a demonstration of conversion bidirectionality and accurate quantification of on-chip efficiency. With the optimized monolithic integrated superconducting EO device based on TFLN-on-sapphire substrate, an on-chip conversion efficiency of 1.02% (internal efficiency, 15.2%) is realized. Our demonstration indicates that with further device improvement, it is feasible for TFLN to approach unitary internal conversion efficiency.