论文标题
Gainsb量子井的热性能用于硅光子应用
Thermal performance of GaInSb quantum well lasers for silicon photonics applications
论文作者
论文摘要
实现硅 - 光子学的关键组件是在1.55 $ $ $ m附近的重要通信频段中运行的集成激光器。一种方法是使用基于燃气的合金，该合金可以直接在硅上生长。在这项研究中，零_ {0.2} $ _ {0.2} $ sb/al $ _ {0.35} $ _ {0.65} $ as $ _ {0.03} $μ$ m已开发并研究了其热性能。可变温度和高压技术用于研究设备设计对性能的影响。 These measurements show that the temperature dependence of the devices is dominated by carrier leakage to the X minima of the Al$_{0.35}$Ga$_{0.65}$As$_{0.03}$Sb$_{0.97}$ barrier layers accounting for up to 43% of the threshold current at room temperature.通过CQW设计中的改进，可以改善设备性能，而通过优化屏障层组合物的优化可以改善载波限制。这项研究为硅在硅上基于煤气的激光的整体整合提供了宝贵的设计见解。
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 $μ$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon. In this study, silicon-compatible strained Ga$_{0.8}$In$_{0.2}$Sb/Al$_{0.35}$Ga$_{0.65}$As$_{0.03}$Sb$_{0.97}$ composite quantum well (CQW) lasers grown on GaSb substrates emitting at 1.55 $μ$m have been developed and investigated in terms of their thermal performance. Variable temperature and high-pressure techniques were used to investigate the influence of device design on performance. These measurements show that the temperature dependence of the devices is dominated by carrier leakage to the X minima of the Al$_{0.35}$Ga$_{0.65}$As$_{0.03}$Sb$_{0.97}$ barrier layers accounting for up to 43% of the threshold current at room temperature. Improvement in device performance may be possible through refinements in the CQW design, while carrier confinement may be improved by optimization of the barrier layer composition. This investigation provides valuable design insights for the monolithic integration of GaSb-based lasers on silicon.
