论文标题
使用异常XRD进行MN2Coal Heusler合金膜的结构见解
Structural insight using anomalous XRD into Mn2CoAl Heusler alloy films grown by magnetron sputtering, IBAS and MBE techniques
论文作者
论文摘要
通过三种不同的方法生长的逆赫斯勒合金MN2COAL薄膜，称为无自旋差异半导体（SGS）：超高真空吸尘器飞溅，AR-ION束辅助溅射和分子束相位，通过比较它们的电气传输属性，微型结构，微型结构，微型级别，层结构。在这些样品中，MBE生长的MN2Coal薄膜由MN和共同富集的相组成，根据异常XRD分析，其结构分别为L21B型和无序的L21型薄膜。尽管它们都显示出SGS特征，但它们都没有构成SGS Heusler合金期望的XA型结构。我们建议，为了验证SGS特性，不仅需要提取磁性和电气传输特性，还需要提取有关膜的微观结构和原子尺度结构的信息，包括原子交换等缺陷。
Inverse Heusler alloy Mn2CoAl thin films, known as a spin-gapless semiconductor (SGS), grown by three different methods: ultra-high vacuum magnetron spattering, Ar-ion beam assisted sputtering, and molecular beam epitaxy, are investigated by comparing their electric transport properties, microstructures and atomic-level structures. Of the samples, the Mn2CoAl thin film grown by MBE consists of Mn- and Co-rich phases, the structures of which are determined to be the L21B-type and disordered L21-type, respectively, according to anomalous XRD analysis. None of them forms the XA-type structure expected for SGS Heusler alloy, although they all show SGS characteristics. We suggest, to validate SGS characteristics, it is necessary to extract not only magnetic and electric transport properties but also information about microstructures and atomic-scale structures of the films including defects such as atomic swap.
