论文标题

(fe,ti)paticle掺杂的MGB $ _2 $超导体,根据掺杂剂级别的磁通限制行为和机制

Flux-Pinning Behaviors and Mechanism According to Dopant Level in (Fe, Ti) Paticle-Doped MgB$_2$ Superconductor

论文作者

Lee, H. B., Kim, G. C., Shon, Young Jin, Kim, Dongjin, Kim, Y. C.

论文摘要

我们已经研究了MGB $ _2 $超导体的通量固定效应,而掺杂(Fe,Ti)颗粒平均为163 nm。 5 wt。\%(fe,ti)掺杂的MGB $ _2 $中的标本显示出磁化强度的最佳田地依赖性,而25 wt。\%的一个人在5 k时表现出最差的磁化。随着温度的增加,两者磁化的场依赖性差异增加。在这里,我们显示了(Fe,Ti)粒子掺杂的MGB $ _2 $的实验结果,根据掺杂剂水平和行为的原因。体积缺陷掺杂的超导体的磁通量效应以理想状态建模。在研究期间,我们必须将体积缺陷超导体的M-H曲线分为三个谨慎的区域,以分析通量固定效应,即diamagnetic增加区域,$δ$ h = $Δ$Δ$ b区域和diamagnetic降低区域。结果,随着掺杂剂水平在最佳掺杂剂水平上的增加,体积缺陷的磁通限制效应降低,这是由于体积缺陷的通量限制极限引起的。并获得类似的行为,因为掺杂剂水平降低了最佳掺杂水平,这是由于体积缺陷数量减少引起的。将理论与实验结果进行比较,随着掺杂剂水平在最佳掺杂剂水平上的增加,偏差增加,而两者在掺杂剂水平上的匹配程度低于最佳掺杂剂水平。该行为被认为是由于体积缺陷的分离引起的。另一方面,过度掺杂标本的特性会随着温度的升高而大大降低,这是由于体积缺陷和隔离效应的通量限制极限引起的。

We have studied flux-pinning effects of MgB$_2$ superconductor by doping (Fe, Ti) particles of which radius is 163 nm on average. 5 wt.\% (Fe, Ti) doped MgB$_2$ among the specimens showed the best field dependence of magnetization and 25 wt.\% one did the worst at 5 K . The difference of field dependence of magnetization of the two increased as temperature increased. Here we show experimental results of (Fe, Ti) particle-doped MgB$_2$ according to dopant level and the causes of the behaviors. Flux-pinning effect of volume defects-doped superconductor was modeled in ideal state. During the study, we had to divide M-H curve of volume defect-dominating superconductor as three discreet regions for analyzing flux pinning effects, which are diamagnetic increase region, $Δ$H=$Δ$B region, and diamagnetic decrease region. As a result, flux-pinning effects of volume defects decreased as dopant level increased over the optimal dopant level, which was caused by decrease of flux-pinning limit of a volume defect. And similar behaviors are obtained as dopant level decreased below the optimal dopant level, which was caused by the decreased number of volume defects. Comparing the theory with experimental results, deviations increased as dopant level increased over the optimal dopant level, whereas the two was well matched on less dopant level than the optimal dopant level. The behavior is considered to be caused by segregation of volume defects. On the other hand, the property of over-doped specimens dramatically decrease as temperature increases, which is caused by double decreases of flux-pinning limit of a volume defect and segregation effect.

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