论文标题
在未居和掺杂的氏型聚（3-己基噻吩）中的阻抗测量
Impedance measurements in undoped and doped regioregular poly(3-hexylthiophene)
论文作者
论文摘要
区域聚（3-己基噻吩）的半导体特性的特征在于40 Hz至100 MHz的阻抗测量。 X射线衍射显示有序区域和无序区域的存在。 Nyquist图对阻抗数据的分析显示了两个半圆形弧，其大小由D.C降低。偏见。同样，光和化学掺杂的载体变化改变了弧的形状和大小。随着载波密度的增加，数据拟合的数据和等效电路显示出电阻，电容和恒定相元素参数的显着变化。载体密度的增加减少了有序区域的放松时间，并且在无序区域中不会发生太大变化。
The semiconducting properties of regioregular poly(3-hexylthiophene) are characterized by impedance measurements, from 40 Hz to 100 MHz. X-ray diffraction shows the presence of both ordered and disordered regions. The analysis of impedance data by Nyquist plots show two semi-circular arcs, and its size is reduced by d.c. bias. Also, the carrier variation by light and chemical doping alters the shape and size of arcs. The fits to the data and equivalent circuits show considerable changes in the resistive, capacitive and constant-phase element parameters as the carrier density increases. The increase in carrier density reduces the relaxation time in ordered regions, and it does not alter much in disordered regions.
