论文标题
与磁绝缘体连接的拓扑绝缘子中的拓扑厅效应
Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator
论文作者
论文摘要
与磁绝缘子（MI）连接的拓扑绝缘子（TI）可能会容纳异常的霍尔效应（AHE），量子AHE和拓扑厅效应（The）。然而，最近的研究表明，Ti/Mi异质结构中共存的磁相可能会导致与A相关的反应，类似于A，但实际上并非如此。本文报道了仅具有一个磁相的Ti/Mi结构中的真实性。该结构显示了t = 2-3 K的温度范围和t = 80-300 k的AHE。在t = 3-80 k上，这两个效应共存但显示相反的温度依赖性。控制测量，计算和仿真共同表明观察到的起源于天空，而不是两个AHE响应的共存。由于界面DMI相互作用而形成天际。估计的DMI强度大大高于重金属系统。
A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T=2-3 K and an AHE at T=80-300 K. Over T=3-80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to an interfacial DMI interaction. The DMI strength estimated is substantially higher than that in heavy metal-based systems.
