论文标题
不同设备参数对基于TIN的钙钛矿太阳能电池的影响以及IN2S3电子传输层以及CUSCN和Spiro-todad替代孔传输层，以高效性能
Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance
论文作者
论文摘要
SCAPS 1-D用于模拟基于无铅环境良性甲基铵二维（CH3NH3SNI3）的太阳能电池。与传统的氧化钛（TiO2）ETL不同，将硫化二氮（IN2S3）用作其高载体迁移率和优化带结构的电子传输层（ETL）。传统昂贵的螺旋形（C81H68N4O8）和便宜的硫氰酸酯（CUSCN）被用作孔传输层（HTL），以观察不同HTL对细胞性能的影响。我们通过改变参数（例如厚度，缺陷密度，价带（VB）的有效状态密度和吸收膜层的带隙，界面陷阱密度和ETL的缺陷密度）来研究电测量的趋势。在最佳条件下，该设备揭示了CUSCN（HTL）的最高效率为18.45％，而Spiro-Metad（HTL）配置的效率最高为19.32％。还观察到两种构型的工作温度，光和带对辐射重组率的波长。所有这些仿真结果将有助于通过更换常用的毒性铅基钙钛矿来制造环保高效钙钛矿太阳能电池。
SCAPS 1-D was used for the simulation of lead-free environmentally benign methylammonium tin-iodide (CH3NH3SnI3) based solar cell. Indium sulphide (In2S3) was utilized as the electron transport layer (ETL) for its high carrier mobility and optimized band structure, unlike traditional titanium oxide (TiO2) ETL. Traditional expensive spiro-OMeTAD (C81H68N4O8) and cheaper cuprous thiocyanate (CuSCN) were utilized alternatively as hole transport layer (HTL) to observe the effect of different HTL on cell performance. We investigated the trend in electrical measurements by altering parameters such as thickness, defect density, valence band (VB) effective density of state and bandgap of the absorber layer, interfacial trap densities and defect density of ETL. At optimum condition, the device revealed the highest efficiency of 18.45% for CuSCN (HTL) and 19.32% for spiro-OMeTAD (HTL) configuration. The effect of working temperature, the wavelength of light and band-to-band radiative recombination rate was also observed for both configurations. All these simulation results will help to fabricate eco-friendly high-efficiency perovskite solar cell by replacing the commonly used toxic lead-based perovskite.
