学术文献库

Transient microscopy is of vital importance in understanding the dynamics of optical excited states in optoelectronic materials, as it allows for a direct visualization of the movement of energy carriers in space and time. Important information on the influence of trap-states can be obtained using this technique, typically observed as a slow-down of the energy transport as carriers are trapped at defect sites. To date, however, studies of the trap-state dynamics have been mostly limited to phenomenological descriptions of the early time-dynamics. In this report, we show how long-acquisition-time transient photoluminescence microscopy can be used to provide a detailed map of the trap-state landscape in 2D perovskites, in particular when used in combination with transient spectroscopy. We reveal anomalous spatial dynamics of excitons in 2D perovskites, which cannot be explained with existing models for trap limited exciton transport that only account for a single trap type. Instead, using a continuous diffusion model and performing Brownian dynamics simulations, we show that this behavior can be explained by accounting for a distinct distribution of traps in this material. Our results highlight the value of transient microscopy as a complementary tool to more common transient spectroscopy techniques in the characterization of the excited state dynamics in semiconductors.