论文标题
设计有效的金属触点到二维半导体Mosi $ _2 $ n $ _4 $和WSI $ _2 $ n $ _4 $单层
Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers
论文作者
论文摘要
与二维（2D）半导体的金属接触在现代电子和光电设备中无处不在。但是，这种接触通常会受到强大的费米固定固定效应（FLP）效应的困扰，从而降低了Schottky屏障高度（SBH）的可调性，并降低了基于2D-副导体的设备的性能。在这项工作中，我们表明单层Mosi $ _2 $ n $ _4 $和WSI $ _2 $ n $ _4 $ - 最近合成的2D材料类，具有出色的机械和电子属性 - 在通过金属接触时表现出强烈抑制的FLP和广泛的可调SBH。获得了S = 0.7的异常大的SBH斜率参数，这表现优于其他绝大多数2D半导体。这种令人惊讶的行为源于Mosi $ _2 $ n $ _4 $和WSI $ _2 $ n $ _4 $的独特形态。偏远的Si-N层形成了一个天然原子层，该层保护半导体的内核免受金属接触的扰动，从而抑制了FLP。我们的发现揭示了Mosi $ _2 $ n $ _4 $和WSI $ _2 $ n $ _4 $单层的潜力，作为设计高性能和能源有效的2D Nanodevices的新颖2D材料平台。
Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ - a recently synthesized 2D material class with exceptional mechanical and electronic properties - exhibit strongly suppressed FLP and wide-range tunable SBH when contacted by metals. An exceptionally large SBH slope parameter of S=0.7 is obtained, which outperform the vast majority of other 2D semiconductors. Such surprising behavior arises from the unique morphology of MoSi$_2$N$_4$ and WSi$_2$N$_4$. The outlying Si-N layer forms a native atomic layer that protects the semiconducting inner-core from the perturbance of metal contacts, thus suppressing the FLP. Our findings reveal the potential of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as a novel 2D material platform for designing high-performance and energy-efficient 2D nanodevices.
