论文标题
通过电子发射光谱法在MBE种植的Ingan量子井中陷阱辅助螺旋钻重组的证据
Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
论文作者
论文摘要
我们报告了通过电子发射光谱氨分子外延生长的蓝光发射二极管在活性区域中产生的热电子的直接测量。这些设备的外部量子效率<1％，不下垂。因此，固有，带间，电子孔或电子孔螺旋钻的效率损失不应成为热载体的重要来源。在这种情况下，热电子的检测表明，在这些设备中正在发生替代的热电子产生过程，这可能是陷阱辅助的螺旋螺旋体重组过程。
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. The detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.
