论文标题

分析生长运动学和二硫化钼膜的分形尺寸

Analyzing Growth Kinematics and Fractal Dimensions of Molybdenum Disulfide Films

论文作者

Jiang, Yan, Baben, Moritz to, Lin, Yuankun, Littler, Chris, Syllaios, A. J., Neogi, Arup, Philipose, Usha

论文摘要

通过碱卤化物在实现过渡金属 - 二氨基核化合物层的大面积生长中的积极作用,已验证,膜增长运动学尚未完全确定。这项工作对MOS $ _2 $形态进行了系统分析,用于在用氯化钠(NACL)的底物的各种预处理条件下生长的膜。在最佳的NaCl浓度下,与MOS $ _2 $的无碱性生长相比,单层的域大小增加了近两个数量级。结果表明,分别与单层和多层分别的分形维度和底物面积覆盖率之间存在反比关系。使用事实状态软件,阐明了NaCl在生长温度下在生长温度下确定基于Mo-和S的化合物的部分压力的作用。碱盐的存在被证明会通过影响MO和S部分压力来影响域的大小和膜形态。与在相同的增长条件下无碱的合成相比,由NACL辅助的MOS $ _2 $胶片增长可导致$ \ $ \ $ 81 $ \%$ \%$ $ \%$由单层覆盖的底物。在理想的生长条件下,在最佳的NaCl浓度下,成核被抑制,结构域扩大,导致MOS $ _2 $单层的大面积生长。发现单层没有碱金属和卤素原子的无意掺杂,并且表现出高结晶度和优异的光电质量。

Through the positive role of alkali halides in realizing large area growth of transition metal-di-chalcogenide layers has been validated, the film-growth kinematics has not yet been fully established. This work presents a systematic analysis of the MoS$_2$ morphology for films grown under various pre-treatment conditions of the substrate with sodium chloride (NaCl). At an optimum NaCl concentration, the domain size of the monolayer increased by almost two orders of magnitude compared to alkali-free growth of MoS$_2$. The results show an inverse relationship between fractal dimension and areal coverage of the substrate with monolayers and multi-layers, respectively. Using the Fact-Sage software, the role of NaCl in determining the partial pressures of Mo- and S-based compounds in gaseous phase at the growth temperature is elucidated. The presence of alkali salts is shown to affect the domain size and film morphology by affecting the Mo and S partial pressures. Compared to alkali-free synthesis under the same growth conditions, MoS$_2$ film growth assisted by NaCl results in $\approx$ 81$\%$ of the substrate covered by monolayers. Under ideal growth conditions, at an optimum NaCl concentration, nucleation was suppressed, and domains enlarged, resulting in large area growth of MoS$_2$ monolayers. The monolayers were found to be free of unintentional doping with alkali metal and halogen atoms and exhibit high crystallinity and excellent opto-electronic quality.

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