论文标题
Mupix10：最终设计的首先结果
MuPix10: First Results from the Final Design
论文作者
论文摘要
高压整体活性像素传感器（HVMAP）的多年研究和开发已达到MU3E像素传感器的最终设计。 Mupix10是一个完全单片的传感器，其主动像素矩阵大小为$ 20 \ times20 \，\ mathrm {mm}^2 $ $ 180 \，\ Mathrm {nm} $ hv-cmos在TSI SemiconDuctors上产生的。像素大小为$ 80 \ times80 \，\ mathrm {μm}^2 $。使用列尺寸架构读取命中率，并最多发送四个串行链接，最高为$ 1.6 \，\ left。\ Mathrm {gbit} \ middle/\ mation/\ mathrm {s} \ right。$ $。通过DC/DC转换器和片上偏置的独家用法，Mupix10可以完全操作，具有最小的电气连接。这是MU3E实验不可或缺的要求，因为它可以构建$ 0.1 \ $ 0.1 \，每层辐射长度的$％的超薄像素模块。提出了实验室表征和测试束运动的第一个结果。
Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of $20\times20\,\mathrm{mm}^2$ produced in the $180\,\mathrm{nm}$ HV-CMOS process at TSI Semiconductors. The pixel size is $80\times80\,\mathrm{μm}^2$. Hits are read out using a column-drain architecture and sent over up to four serial links with up to $1.6\,\left.\mathrm{Gbit}\middle/\mathrm{s}\right.$ each. By means of DC/DC converters and exclusive usage of on-chip biasing, MuPix10 is fully operable with a minimal set of electrical connections. This is an integral requirement by the Mu3e experiment since it enables the construction of ultra-thin pixel modules with $0.1\,$% of a radiation length per layer. First results from lab characterisation and testbeam campaigns are presented.
