论文标题
ZRTE5中弱拓扑绝缘体状态的观察和控制
Observation and control of the weak topological insulator state in ZrTe5
论文作者
论文摘要
量子自旋霍尔绝缘子在一维边缘占据拓扑状态,严格禁止通过非磁性杂质进行反向散射,无耗散电流流动。它的3D类似物是一种弱拓扑绝缘子(WTI),具有限制在晶体侧面表面的类似的准1D拓扑状态。增强的限制可以为无耗散电流提供一条途径,并相对于所研究的强大拓扑绝缘子,用于应用的更好优势。但是,拓扑侧面通常不可裂解,因此很难通过角度分辨光发射光谱(ARPE)观察,这阻碍了WTIS的电子特性的揭示。在这里,我们首次通过旋转和角度分辨光发射光谱来可视化WTI候选ZRTE5的拓扑表面状态:在侧面表面揭示了带有自旋摩托明锁定的准1D带。我们进一步证明,Zrte5中的散装带隙由应变与晶体控制,实现了更稳定的WTI状态或理想的Dirac半准态,具体取决于外部应变的方向。我们在ZRTE5中发现的高方向自旋 - 电流和可调频带间隙将为应用提供出色的平台。
A quantum spin Hall insulator hosts topological states at the one-dimensional edge, along which backscattering by nonmagnetic impurities is strictly prohibited and dissipationless current flows. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces of crystals. The enhanced confinement could provide a route for dissipationless current and better advantages for applications relative to the widely studied strong topological insulators. However, the topological side surface is usually not cleavable and is thus hard to observe by angle-resolved photoemission spectroscopy (ARPES), which has hindered the revealing of the electronic properties of WTIs. Here, we visualize the topological surface states of the WTI candidate ZrTe5 for the first time by spin and angle-resolved photoemission spectroscopy: a quasi-1D band with spin-momentum locking was revealed on the side surface. We further demonstrate that the bulk band gap in ZrTe5 is controlled by strain to the crystal, realizing a more stabilized WTI state or an ideal Dirac semimetal state depending on the direction of the external strain. The highly directional spin-current and the tunable band gap we found in ZrTe5 will provide an excellent platform for applications.