论文标题
固有的磁性拓扑
Intrinsic magnetic topological insulators
论文作者
论文摘要
将磁性引入拓扑绝缘器中会破坏时间反转对称性，并且磁交换相互作用可以在原本无间隙的拓扑表面状态下打开差距。这允许产生各种新型的拓扑量子状态，包括量子异常效应（QAHE）和轴突绝缘子状态。磁掺杂和磁接近度被视为探索拓扑与磁性之间相互作用的有用手段。然而，磁掺杂的不均匀性导致复杂的磁有序和较小的交换间隙，因此观察到的Qahe仅在超高温度下才出现。因此，固有的磁性拓扑绝缘子非常需要增加QAHE工作温度和进一步研究拓扑量子现象。这种系统的实现和表征对于基本物理和潜在的技术革命都是必不可少的。这篇综述总结了内在磁性拓扑绝缘子的最新研究进展，主要集中在抗铁磁拓扑绝缘子MNBI2TE4及其材料家族上。
Introducing magnetism into topological insulators breaks time-reversal symmetry, and the magnetic exchange interaction can open a gap in the otherwise gapless topological surface states. This allows various novel topological quantum states to be generated, including the quantum anomalous Hall effect (QAHE) and axion insulator states. Magnetic doping and magnetic proximity are viewed as being useful means of exploring the interaction between topology and magnetism. However, the inhomogeneity of magnetic doping leads to complicated magnetic ordering and small exchange gaps, and consequently the observed QAHE appears only at ultralow temperatures. Therefore, intrinsic magnetic topological insulators are highly desired for increasing the QAHE working temperature and for investigating topological quantum phenomena further. The realization and characterization of such systems are essential for both fundamental physics and potential technical revolutions. This review summarizes recent research progress in intrinsic magnetic topological insulators, focusing mainly on the antiferromagnetic topological insulator MnBi2Te4 and its family of materials.
