论文标题

超球电子通过GA [al]中的点接触作为异质结构

Superballistic electron flow through a point contact in a Ga[Al]As heterostructure

论文作者

Ginzburg, Lev V., Gold, Carolin, Röösli, Marc P., Reichl, Christian, Berl, Matthias, Wegscheider, Werner, Ihn, Thomas, Ensslin, Klaus

论文摘要

我们通过在不同温度和散装电子密度下作为异质结构中的高弹性电子气体中的点接触测量电子传输。对于所有研究的电子密度和点接触宽度,在温度窗口中,通过所有点接触的电导随温度窗口中的温度增加而增加。对于高电子密度,此电导超过了基本弹道极限(Sharvin限制)。这些观察结果与石墨烯中的粘性电子传输模型和先前的实验一致。

We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with increasing temperature in a temperature window around $T \sim 10 K$ for all investigated electron densities and point contact widths. For high electron densities this conductance exceeds the fundamental ballistic limit (Sharvin limit). These observations are in agreement with a viscous electron transport model and previous experiments in graphene.

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