论文标题
RES2/H-BN/石墨烯异质结构基于多功能设备：隧道二极管，FET，逻辑门和内存
ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory
论文作者
论文摘要
我们研究了由几层直接带隙RES2，薄H-BN层和单层石墨烯组成的二维（2D）异质结构，用于应用于各种电子设备。最近研究了具有二维（2D）Van-der-Waals（VDW）异质结构的金属 - 胰蛋白 - 型型设备作为重要组件，以实现各种多功能设备在模拟和数字电子中实现各种多功能设备应用。 RES2/H-BN/石墨烯的隧道二极管表现出具有低理想因素和几乎独立的电气特性的轻调整流行为。这些设备的行为就像用于逻辑门应用程序的常规错误类型隧道二极管。此外，显示出类似的垂直异质结构在阈值较低的电视效应晶体管中运行，并且具有较大内存门的存储器设备可用于将来的多功能设备应用。
We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic devices. Metal-insulator-semiconductor (MIS)-type devices with two-dimensional (2D) van-der-Waals (vdW) heterostructures have recently been studied as important components to realize various multifunctional device applications in analogue and digital electronics. The tunnel diodes of ReS2/h-BN/graphene exhibit light tuneable rectifying behaviours with low ideality factors and nearly temperature independent electrical characteristics. The devices behave like conventional MIS-type tunnel diodes for logic gate applications. Furthermore, similar vertical heterostructures are shown to operate in field effect transistors with a low threshold voltage and a memory device with a large memory gate for future multifunctional device applications.
