论文标题
高导电氧化物Srmoo $ _3 $的分子束外延生长
Molecular beam epitaxy growth of the highly conductive oxide SrMoO$_3$
论文作者
论文摘要
SRMOO $ _3 $是其出色的电导率的有前途的材料，但是增长的高质量薄膜仍然是一个挑战。在这里，我们使用分子束外延（MBE）技术合成了Srmoo $ _3 $的外延膜，该技术在低氧气流量下。引入胶片和（001）面向面向的Srtio $ _3 $或KTAO $ _3 $底物之间的SRTIO $ _3 $缓冲层的4--8个单元单元的缓冲层至关重要。与其他技术获得的膜相比，获得的膜显示出改善的电导率。 SRMOO $ _3 $膜的高质量还通过角度分辨光发射光谱（ARPES）测量验证，显示清晰的费米表面。
SrMoO$_3$ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO$_3$ using the molecular beam epitaxy (MBE) technique under a low oxygen-flow rate. Introduction of SrTiO$_3$ buffer layers of 4--8 unit cells between the film and the (001)-oriented SrTiO$_3$ or KTaO$_3$ substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO$_3$ film is also verified by angle-resolved photoemission spectroscopy (ARPES) measurements showing clear Fermi surfaces.
