论文标题
通过测量浮动门电压来了解内存窗口高估2D材料的浮动门类型内存设备
Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage
论文作者
论文摘要
浮动门（FG）类型的非易失性存储器（NVM）设备的内存窗口是一种基本功绩，不仅用于评估性能，例如保留和耐力，而且还讨论了高级功能存储设备的可行性。但是，基于圆形扫描传输曲线的二维（2D）材料设备的内存窗口是从历史上确定的，而传统的SI NVM设备的存储窗口是根据高阈值电压（VTHS）确定的，这些曲线是通过单扫描曲线测量的。在这里，可以阐明，与单扫描传输曲线确定的2D NVM设备的存储窗口被高估了2D NVM设备的内存窗口。本研究中提出的浮动门电压测量表明，圆形扫描中的VTH不仅受浮子门中存储的电荷数量的控制，而且还通过浮动门和后门之间的电容耦合来控制。在高估内存窗口上的目前发现使得能够适当评估2D NVM设备的潜力。
The memory window of floating gate (FG) type non-volatile memory (NVM) devices is a fundamental figure of merit used not only to evaluate the performance, such as retention and endurance, but also to discuss the feasibility of advanced functional memory devices. However, the memory window of two dimensional (2D) materials based NVM devices is historically determined from round sweep transfer curves, while that of conventional Si NVM devices is determined from high and low threshold voltages (Vths), which are measured by single sweep transfer curves. Here, it is elucidated that the memory window of 2D NVM devices determined from round sweep transfer curves is overestimated compared with that determined from single sweep transfer curves. The floating gate voltage measurement proposed in this study clarifies that the Vths in round sweep are controlled not only by the number of charges stored in floating gate but also by capacitive coupling between floating gate and back gate. The present finding on the overestimation of memory window enables to appropriately evaluate the potential of 2D NVM devices.
