论文标题
基于Algan/GAN异质结构中的高对比度（HCG）的电气调节器的设计和分析
Design and analysis of electro-optic modulators based on high contrast gratings (HCGs) in AlGaN/GaN heterostructures
论文作者
论文摘要
最近，提出了高电子迁移式晶体管（HEMT）启发的III-V电气调节器拓扑，以实现由于IIII-V异构结构界面处于IIII-V异质结构界面的2D电子气体（2DEG）而引起的高速电磁调节器。 2DEG高度限制在接口上，扩展到散装中的深度很低（$ \ $ \ $ 10nm），因此与光学模式的空间重叠有限。在本文中，我们提出了一种新型的调制器设计，以增强2DEG-LIGHT相互作用，其中HEMT嵌入了高对比度光栅（HCG）镜中。我们提出了一个分析模型，该模型将常规HCG模型扩展到多层结构，并与严格的耦合波分析（RCWA）观察到良好的一致性。我们探索了识别最佳设备拓扑的设计空间，并呈现几何形状，这些几何形状会导致C-和L波段波长的70％的反射率变化。我们还提出了灵敏度分析的结果，并观察到由于设备制造缺陷引起的几何变化而引起的设备性能变化较低。此处介绍的设备平台适用于通过将HEMT HCG结合到Fabry-Perot腔中来设计高效率电气调节器。
Recently High Electron Mobility Transistor (HEMT) inspired III-V electro-optic modulator topologies were proposed for realizing high speed electro-optic modulators leveraging plasma dispersion effect due to the 2D Electron Gas (2DEG) present at the III-V heterostructure interface. The 2DEG is highly confined at the interface, extending to very low depths in the bulk ($\approx$10nm) and therefore has limited spatial overlap with the optical mode. In this paper, we propose a novel modulator design to boost the 2DEG-light interaction, wherein the HEMT is embedded within a high contrast grating (HCG) mirror. We present an analytical model extending the conventional HCG model to multi-layer structures and observe good agreement with rigorous coupled-wave analysis (RCWA). We explore the design space for identifying optimal device topology and present geometries that produce a change in reflectivity as large as 70% for C- and L-band wavelengths. We also present results of sensitivity analysis and observe low variation in device performance due to geometry variation arising from device fabrication imperfections. The device platforms presented here are suitable for designing high efficiency electro-optic modulators by incorporating the HEMT HCG into a Fabry-Perot cavity.
