论文标题
对非均匀掺杂或形状的PN结二极管的大信号和高频分析
Large-Signal and High--Frequency Analysis of Nonuniformly Doped or Shaped PN-Junction Diodes
论文作者
论文摘要
提出了在高频下提交给大信号的非均匀掺杂或形状的PN结二极管的分析理论。结果表达式对于评估半导体设备建模软件的性能很有用。横向平均技术用于将三维荷载载流子传输方程减少到准二维形式中，所有物理量在纵向变化的横截面上平均。尽管假定是轴向对称性的，但这种方法为静电电流 - 电压特性，扩散电导率和扩散电容的有用分析表达与信号振幅和横截面不均匀性的关系。
An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-one-dimensional form, with all physical quantities averaged out over the longitudinally-varying cross section. Although, it is assumed an axial symmetry, this approach gives rise to useful analytic expressions for the static current--voltage characteristics, the diffusion conductance, and diffusion capacitance as a function of the signal amplitude and the cross section non-uniformity.
