论文标题
在范德华材料与AG之间的界面上的德国烯直接生长（111）
Direct growth of germanene at interfaces between van der Waals materials and Ag(111)
论文作者
论文摘要
Germanene是一种二维蜂窝晶体晶体，生长在石墨烯/AG（111）和六角形硝酸硼（H-BN）/AG（111）界面，通过隔离也属原子。 N2或H2/AR在环境压力下的简单退火过程会导致德国烯的形成，这表明不需要超高效率。种植的德国烯在空气中是稳定的，在覆盖有范德华（VDW）材料的整个区域均匀。作为一个重要发现，必须将VDW材料用作当前德国生长方法的盖层，因为使用Al2O3帽层没有导致德国烯的形成。本研究还证明，空气中的拉曼光谱是在界面上表征德国烯的强大工具，这是通过包括第一原理密度功能理论计算的多个分析结论的。在本研究中证明，H-BN限制的Germanene在Ag（111）上的直接增长被认为是制造未来德国烯电子设备的一种有希望的技术。
Germanene, a two-dimensional honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N2 or H2/Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh-vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al2O3 cap layer resulted in no germanene formation. The present study also proved that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first-principles density functional theory calculations. The direct growth of h-BN-capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene-based electronic devices.
