论文标题
硅原子电线中的离子电荷分布
Ionic Charge Distributions in Silicon Atomic Wires
论文作者
论文摘要
使用非接触式原子力显微镜（NC-AFM），我们检查了氢终止硅（100）2x1表面上的连续DB线结构。通过探测不同能量的DB结构，我们确定了与DB电线净电荷相关的先前未观察到的离子电荷分布的形成及其预测的晶格失真。进行光谱分析，我们确定了对应于替代晶格扭曲的较高能量构型以及尖端诱导的充电效应。通过改变这些DB结构的长度和方向，我们进一步突出了这些离子表面相形成的关键特征。
Using a non-contact atomic force microscope (nc-AFM), we examine continuous DB wire structures on the hydrogen-terminated silicon (100) 2x1 surface. By probing the DB structures at varying energies, we identify the formation of previously unobserved ionic charge distributions correlated to the net charge of DB wires and their predicted lattice distortion. Performing spectroscopic analysis, we identify higher energy configurations corresponding to alternative lattice distortions as well as tip-induced charging effects. By varying the length and orientation of these DB structures, we further highlight key features in the formation of these ionic surface phases.
