论文标题
通过界面工程调整α-抗乙烯单层的电子结构
Tuning the electronic structure of α-antimonene monolayer through interface engineering
论文作者
论文摘要
底物的界面电荷转移可能会影响外延范德华（VDW）单层的电子结构，从而影响其进一步的技术应用。例如，预测在浸泡的蜂窝阶段（α-抗苯烯）中的独立式SB单层，即黑磷烯的结构类似物，预计是半导体，但是在TDD-WTE2 subtrate上生长时，外延的一个人的表现形式是无间隙的半微粒。在这里，我们证明可以应用界面工程来调整界面电荷转移，从而调整了外延单层的电子带。结果，在SNSE底物上成功获得了几乎独立的（半导体）α-抗苯乙烯单层，其带隙为〜170 MEV。此外，在双层α-抗苯乙烯中观察到半导体 - 偏跨。这项研究为通过接口工程在二维VDW材料中修改电子结构的方式铺平了道路。
The interfacial charge transfer from the substrate may influence the electronic structure of the epitaxial van der Waals (vdW) monolayers and thus their further technological applications. For instance, the freestanding Sb monolayer in puckered honeycomb phase (α-antimonene), the structural analog of black phosphorene, was predicted to be a semiconductor, but the epitaxial one behaves as a gapless semimetal when grown on the Td-WTe2 substrate. Here, we demonstrate that interface engineering can be applied to tune the interfacial charge transfer and thus the electron band of epitaxial monolayer. As a result, the nearly freestanding (semiconducting) α-antimonene monolayer with a band gap of ~170 meV was successfully obtained on the SnSe substrate. Furthermore, a semiconductor-semimetal crossover is observed in the bilayer α-antimonene. This study paves the way towards modifying the electron structure in two-dimensional vdW materials through interface engineering.
