论文标题
拓扑半学候选tbptbi中的大型异常大厅角
Large anomalous Hall angle in a topological semimetal candidate TbPtBi
论文作者
论文摘要
研究了TBPTBI的抗铁磁半手单晶的磁转运性能，一种磁场诱导的拓扑半学具有简单带结构。我们发现，高磁场（B> 7T）中异常霍尔电阻率的非单调磁场依赖性来自施加外部磁场时像Zeeman一样分裂引起的带状结构的变化。实验结果表明，可靠的异常霍尔电阻率和电导率分别达到0.6798mΩcm和125Ω-1cm-1。在TBPTBI中获得了最高33％的大型AHA，这与典型的铁磁韦伊尔半学相媲美。结果分析表明，它应归因于EF周围和低载体密度周围的拓扑带。
The magnetotransport properties in antiferromagnetic half-Heusler single crystals of TbPtBi, a magnetic-field-induced topological semimetal with simple band structure, are investigated. We found that a nonmonotonic magnetic field dependence of the anomalous Hall resistivity in a high magnetic field (B>7T), which come from the change of band structure induced by the Zeeman-like splitting when applying the external magnetic field. The experiment results show that credible anomalous Hall resistivity and conductivity reach up to 0.6798mΩcm and 125Ω-1cm-1, respectively. A large AHA up to 33% is obtained in TbPtBi, which is comparable to typical ferromagnetic Weyl semimetal. The analysis of results show it should be attributed to topological band around EF and low carrier density.
