论文标题
通过选择性区域的增长和阴影蒸发,完全原位的INAS纳米线约瑟夫森连接
Fully in-situ InAs nanowire Josephson junctions by selective-area growth and shadow evaporation
论文作者
论文摘要
基于INAS半导体纳米线和NB超导电极的约瑟夫森连接是通过用于超导电极的特殊阴影蒸发方案在原地制造的。与其他金属超导体(例如AL)相比,NB具有较大的超导体间隙的优点,该间隙允许在较高的温度和磁场下运行。我们的交界处是通过在两个相邻的倾斜Si(111)刻面上选择性生长的INAS纳米线上的NB阴影蒸发来制造的,并在较小的距离处相互交叉。相对于沉积源的上线充当阴影掩模,确定下纳米线上超导电极的间隙。电子显微镜测量表明,完全原位制造方法可提供干净的INAS/NB界面。在电流 - 电压特性中观察到明显的约瑟夫森超电流,可以通过底门控制。多余的电流为0.68表示高连接透明度。在微波辐射下,观察到明显的整数shapiro步骤,表明正弦电流相位关系。由于NB的较大临界场,可以将约瑟夫森超电流保持在超过1 t的磁场上。我们的结果表明,原位准备的NB/INAS纳米线触点是非常有趣的候选者,用于超导量子电路,需要大磁场。
Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as Al, Nb has the advantage of a larger superconducting gap which allows operation at higher temperatures and magnetic fields. Our junctions are fabricated by shadow evaporation of Nb on pairs of InAs nanowires grown selectively on two adjacent tilted Si (111) facets and crossing each other at a small distance. The upper wire relative to the deposition source acts as a shadow mask determining the gap of the superconducting electrodes on the lower nanowire. Electron microscopy measurements show that the fully in-situ fabrication method gives a clean InAs/Nb interface. A clear Josephson supercurrent is observed in the current-voltage characteristics, which can be controlled by a bottom gate. The excess current of 0.68 indicates a high junction transparency. Under microwave radiation, pronounced integer Shapiro steps are observed suggesting a sinusoidal current-phase relation. Owing to the large critical field of Nb, the Josephson supercurrent can be maintained to magnetic fields exceeding 1 T. Our results show that in-situ prepared Nb/InAs nanowire contacts are very interesting candidates for superconducting quantum circuits requiring large magnetic fields.