论文标题
ch $ _3 $ nh $ _3 $ pbi $ _3 $ perovskite Crystallization Process Process的原位监控载电载体动力学
In-Situ Monitoring of the Charge Carrier Dynamics of CH$_3$NH$_3$PbI$_3$ Perovskite Crystallization Process
论文作者
论文摘要
尽管甲基铵铅碘化物($ _3 $ nh $ _3 $ _3 $ pbi $ _3 $)perovskite在过去十年左右的时间里引起了极大的科学关注,但有关佩洛弗斯设备中电荷提取动力学和重新组合过程的重要信息仍然缺失。本文中,我们提出了一种新颖的方法,可以通过对热退火结晶过程中的钙钛矿层载体动力学的原位监视,评估CH $ _3 $ _3 $ _3 $ _3 $ _3 $ layers,通过时间分辨时间分辨的龙杆菌的瞬时瞬时吸收光谱(Tas)。 In particular, CH$_3$NH$_3$PbI$_3$ films were deposited on two types of polymeric hole transport layers (HTL), poly(3,4-ethylenedioxythiophene)-poly-(styrenesulfonate) (PEDOT:PSS) and poly-(triarylamine) (PTAA), that are known to provide different carrier transport characteristics in perovskite solar细胞。为了监视结晶过程中钙钛矿荷载体动力学的演变,TAS在三种不同的退火温度(即90、100和110 oc)中研究了SOFormed Ch $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _据显示,要在衰减动力学方面实现最佳钙钛矿膜质量所需的退火时间,这在很大程度上取决于退火温度以及使用的HTL。对于这两个HTL,都使用较高的退火温度时,所需的周期降低,而对于疏水性PTAA聚合物的较高,则需要更长的退火期才能获得最佳的电荷载体动力学。分析了TAS发现与钙钛矿膜的结构和形态特征的相关性,并为钙钛矿光电设备中的电荷提取动力学和重组过程提供了有用的见解。
Although methylammonium lead iodide (CH$_3$NH$_3$PbI$_3$) perovskite has attracted enormous scientific attention over the last decade or so, important information on the charge extraction dynamics and recombination processes in perovskite devices is still missing. Herein we present a novel approach to evaluate the quality of CH$_3$NH$_3$PbI$_3$ layers, via in-situ monitoring of the perovskite layer charge carrier dynamics during the thermal annealing crystallization process, by means of time-resolved femtosecond transient absorption spectroscopy (TAS). In particular, CH$_3$NH$_3$PbI$_3$ films were deposited on two types of polymeric hole transport layers (HTL), poly(3,4-ethylenedioxythiophene)-poly-(styrenesulfonate) (PEDOT:PSS) and poly-(triarylamine) (PTAA), that are known to provide different carrier transport characteristics in perovskite solar cells. In order to monitor the evolution of the perovskite charge carrier dynamics during the crystallization process, the so-formed CH$_3$NH$_3$PbI$_3$/HTL architectures were studied in-situ by TAS at three different annealing temperatures, i.e. 90, 100 and 110 oC. It is revealed that the annealing time period required in order to achieve the optimum perovskite film quality in terms of the decay dynamics strongly depends on the annealing temperature, as well as, on the employed HTL. For both HTLs, the required period decreases as higher annealing temperature is used, while, for the more hydrophobic PTAA polymer, longer annealing periods were required in order to obtain the optimum charge carrier dynamics. The correlation of the TAS finding with the structural and morphological features of the perovskite films is analysed and provides useful insights on the charge extraction dynamics and recombination processes in perovskite optoelectronic devices.