论文标题
稀有地球钡铜矿的高增长率很强
Strong pinning at high growth rates in Rare Earth Barium Cuprate
论文作者
论文摘要
我们提出了一种简单的液体辅助加工（LAP）方法，在脉冲激光沉积生长期间可在原位使用，以使快速生长速率（50 Hz沉积，导致> 250 nm/min的单个羽流）和强钉（以相似速度生长的普通标准YBCO膜上改善x 5-10（改进x 5-10）。迄今为止，同时实现这两个重要功能是一个严重的瓶颈。膝上可以增强膜的生长动力学，从而使良好的结晶完美速度比正常生长速度高60 x，同时还可以使人工固定中心自由组装成精细的纳米coloclumns。此外，LAP允许重新混合（Y 80％与20％的YB，SM或YB+SM），在Rebco晶格内产生有效的点状疾病，并在30 K及以下可强烈改善固定。总体而言，膝盖是一种简单的方法，可以通过其他原位物理或蒸气沉积方法（即PLD，MOCVD，蒸发等）采用，以显着提高生长速度和性能。
We present a simple liquid assisted processing (LAP) method, to be used in-situ during pulsed laser deposition growth to give both rapid growth rates (50 Hz deposition leading to >250 nm/min with a single plume) and strong pinning (improved x 5-10 over plain standard YBCO films grown at similar rates). Achieving these two important features simultaneously has been a serious bottleneck to date. LAP enhances the kinetics of the film growth so that good crystalline perfection can be achieved at up to 60 x faster growth rates than normal, while also enabling artificial pinning centres to be self assembled into fine nanocolumns. In addition, LAP allows for RE mixing (80% of Y with 20% of Yb, Sm, or Yb+Sm), creating effective point-like disorder within the REBCO lattice and which leads to strongly improved pinning at 30 K and below. Overall, LAP is a simple method which could be adopted by other in-situ physical or vapour deposition methods (i.e PLD, MOCVD, evaporation, etc) to significantly enhance both growth rate and performance.
