论文标题
MNTE（BI2TE3）n的吸附控制生长通过分子束外延表现出化学计量对照的磁性
Adsorption-controlled growth of MnTe(Bi2Te3)n by molecular beam epitaxy exhibiting stoichiometry-controlled magnetism
论文作者
论文摘要
我们报告了通过分子束外延的内在磁拓扑系统MNTE（BI2TE3）N的生长。通过映射温度和BI：MN通量比，可以表明在225°C时具有2.0 <bi：Mn <2.6的n = 1相MnBi2Te4的生长窗口。在这里，薄膜是化学计量的，并且未纳入过多的BI和TE。在较高的通量比（BI：MN> 4.5）下，发现n = 2 Mnbi4te7相稳定。运输测量表明，MNBI2TE4和MNBI4TE7分别在25 K和10 K左右进行磁过渡，与大体中发现的抗磁相一致。此外，对于富含Mn的条件（BI：MN <2），出现了铁磁性，在Hall效应中表现出明显的滞后状态，这可能表明Mn掺杂的MNBI2TE4。了解如何种植三元硫族化的阶段是合成新材料和接口磁性和拓扑的关键，这是实现和控制异国情调量子现象的途径。
We report the growth of the intrinsic magnetic topological system MnTe(Bi2Te3)n by molecular beam epitaxy. By mapping the temperature and the Bi:Mn flux ratio, it is shown that there is a narrow growth window for the n=1 phase MnBi2Te4 with 2.0<Bi:Mn<2.6 at 225 °C. Here the films are stoichiometric and excess Bi and Te is not incorporated. At higher flux ratios (Bi:Mn>4.5) it is found that the n = 2 MnBi4Te7 phase is stabilized. Transport measurements indicate that the MnBi2Te4 and MnBi4Te7 undergo magnetic transitions around 25 K, and 10 K, respectively, consistent with antiferromagnetic phases found in the bulk. Further, for Mn-rich conditions (Bi:Mn<2), ferromagnetism emerges that exhibits a clear hysteretic state in the Hall effect, which likely indicates Mn-doped MnBi2Te4. Understanding how to grow ternary chalcogenide phases is the key to synthesizing new materials and to interface magnetism and topology, which together are routes to realize and control exotic quantum phenomena.
