论文标题
单层MOS_2在CSPBBR_3量子点上通过电荷转移在室温下的带隙重新归一化
Bandgap renormalization in monolayer MoS_2 on CsPbBr_3 quantum dot via charge transfer at room temperature
论文作者
论文摘要
单体效应和单层过渡金属二分法中的强库仑相互作用导致内在带隙收缩，源自电气/光学带隙，激子结合能和自旋轨道拆分的重新归一化。通常在低温下观察到这种重新归一化现象，需要高光子激发密度。在这里，我们介绍了通过电荷传输在室温下锚定在CSPBBR_3 perovskite量子点上的单层MOS_2中的增强带隙重新归一化。从钙钛矿显着转移的电子量产生了MOS_2中的大量等离子体筛选。异质结构中的带隙被84 MeV红移，其泵通量最小，这是室温下单层MOS_2中最高的带隙重新归一化，这会随着泵的进一步增加而饱和。我们进一步发现，带隙重新归一化的大小与托马斯 - 富尔米筛选长度成反比。这提供了足够的空间来探索在现有的大型带式范围范德华异质结构的现有庞大库中的带隙重新归一化，该库沿实用设备（例如太阳能电池，光电探测器和光发射二极管）。
Many-body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to shrink the intrinsic bandgap, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin-orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, we present the augmented bandgap renormalization in monolayer MoS_2 anchored on CsPbBr_3 perovskite quantum dots at room temperature via charge transfer. The amount of electrons significantly transferred from perovskite gives rise to the large plasma screening in MoS_2. The bandgap in heterostructure is red-shifted by 84 meV with minimal pump fluence, the highest bandgap renormalization in monolayer MoS_2 at room temperature, which saturates with further increase of pump fluence. We further find that the magnitude of bandgap renormalization inversely relates to Thomas-Fermi screening length. This provides plenty of room to explore the bandgap renormalization within existing vast libraries of large bandgap van der Waals heterostructure towards practical devices such as solar cells, photodetectors and light-emitting-diodes.
