论文标题
R.F.制备的纳米晶体化Aln的结构，化学和光学特征：ER薄膜磁控溅射
Structural, chemical and optical characterizations of nanocrystallized AlN:Er thin films prepared by r.f. magnetron sputtering
论文作者
论文摘要
纳米晶体n-aln：er薄膜被r沉积在（001）硅底物上。 f。在室温下进行磁控蛋白溅射以研究1.54 $ $ m ir光致发光（PL）强度，ALN晶体结构和ER浓度速率之间的相关性。这项研究首先介绍了X射线（EDSX）ER悬崖Lorimer敏感性因子alpha = 5的能量分散光谱如何通过将EDSX和电子探针微分析（EPMA）结合在参考样品中获得。其次，它列出了具有相同溅射参数作为ER浓度的函数制备的纳米晶体化样品的相对PL强度。通过透射电子显微镜观察到Aln膜中的结晶物的结构。
Nanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates by r. f. magnetron sputtering at room temperature to study the correlation between 1.54 $μ$m IR photoluminescence (PL) intensity, AlN crystalline structure and Er concentration rate. This study first presents how Energy-Dispersive Spectroscopy of X-rays (EDSX) Er Cliff Lorimer sensitivity factor alpha = 5 is obtained by combining EDSX and electron probe micro analysis (EPMA) results on reference samples. It secondly presents the relative PL intensities of nanocrystallized samples prepared with identical sputtering parameters as a function of the Er concentration. The structure of crystallites in AlN films is observed by transmission electron microscopy.
