论文标题
空缺对现实拓扑绝缘子纳米骨的电子传输特性的障碍影响：bismuthene的情况
Disorder effects of vacancies on the electronic transport properties of realistic topological insulators nanoribbons: the case of bismuthene
论文作者
论文摘要
假定拓扑材料抵抗混乱和缺陷的稳健性是被假定的，但在现实系统中尚未明确证明。在这项工作中，我们使用最先进的密度功能理论和递归非平衡的Green的功能方法来研究疾病在长纳米纤维的电子传输中的影响，最高可达157 nm，作为空置浓度的函数。在狭窄的纳米容器中，即使对于较小的空缺浓度，缺陷型局部状态也会引起边缘状态之间的杂交，从而消除拓扑保护并实现反向散射事件。我们表明，拓扑保护对宽纳米骨纤维更为强大，但令人惊讶的是，它因中等结构障碍而分解。我们的研究有助于建立有缺陷的bismuthene纳米纤维的一些界限，以此作为旋转型应用的有前途的候选者。
The robustness of topological materials against disorder and defects is presumed but has not been demonstrated explicitly in realistic systems. In this work, we use state-of-the-art density functional theory and recursive nonequilibrium Green's functions methods to study the effect of disorder in the electronic transport of long nanoribbons, up to 157 nm, as a function of vacancy concentration. In narrow nanoribbons, even for small vacancy concentrations, defect-like localized states give rise to hybridization between the edge states erasing topological protection and enabling backscattering events. We show that the topological protection is more robust for wide nanoribbons, but surprisingly it breaks down at moderate structural disorder. Our study helps to establish some bounds on defective bismuthene nanoribbons as promising candidates for spintronic applications.
