论文标题
由Chern绝缘子中的带结构调制引起的拓扑相变
Topological phase transition induced by band structure modulation in a Chern insulator
论文作者
论文摘要
在这里,我们研究了在存在电子色散的情况下,Chern绝缘子的拓扑特性的系统演变,可以从类似狄拉克(Dirac)直至半迪拉克(Semi-Dirac)及以后平稳调节。 The band structure under such controlled deformation shows that the two Dirac points approach each other, merge at an intermediate point (the ${\mathbf{M}}$ point), where the low energy spectrum turns gapless, shows anisotropic Dirac features in the $k$-space and is denoted as the semi-Dirac limit, however a gap eventually opens up again in the spectrum.通过在布里渊区(BZ)上整合浆果曲率获得的Chern数相图显示了“拓扑”裂片的逐渐收缩,并且消失在电子分散体的半迪拉克极限之上。因此,在整个半迪拉克点上,从拓扑阶段到微不足道的相位存在相变。异常的霍尔电导率高原的消失以及手性边缘的合并状态与$ {\ mathbf {m}} $点附近的散装带提供了对观察到的相变的强大支持。
Here we study the systematic evolution of the topological properties of a Chern insulator in presence of an electronic dispersion that can be tuned smoothly from being Dirac-like till a semi-Dirac one and beyond. The band structure under such controlled deformation shows that the two Dirac points approach each other, merge at an intermediate point (the ${\mathbf{M}}$ point), where the low energy spectrum turns gapless, shows anisotropic Dirac features in the $k$-space and is denoted as the semi-Dirac limit, however a gap eventually opens up again in the spectrum. The Chern number phase diagram obtained via integrating the Berry curvature over the Brillouin zone (BZ) shows a gradual shrinking of the 'topological' lobes, and vanishes just beyond the semi-Dirac limit of the electronic dispersion. Thus there is a phase transition from a topological phase to a trivial phase across the semi-Dirac point. The vanishing of the anomalous Hall conductivity plateau and the merger of the chiral edge states with the bulk bands near the ${\mathbf{M}}$ point provide robust support of the observed phase transition.