论文标题
超级CMO的Ab-Initio negf观点：从2D材料基本面到新型动态掺杂晶体管
Ab-initio NEGF Perspective of Ultra-Scaled CMOS: From 2D-material Fundamentals to Novel Dynamically-Doped Transistors
论文作者
论文摘要
使用精确的耗散DFT-Negf原子仿真技术，我们将重新研究以低绩效CMOS应用的缩放量表的可能性。我们表明，良好的静电控制与高迁移率的结合对于满足严格的路线图目标至关重要。这种要求通常以低于10 nm的栅极长度相互对抗，用于由常规半导体材料制成的MOS晶体管，例如SI，GE或III-V，并且尺寸尺度预计将在12 nm的栅极长度左右结束。我们证明，使用替代2D通道材料（例如较少探索的HFS2或ZRS2），高速驱动电流可达到约6 nm，但是可以实现。我们还提出了一种新型的晶体管概念，即动态掺杂的场效应晶体管，比其MOSFET对应物缩放得更好。与HFS2这样的高机动性材料结合使用，它可以在使用单门结构和超紧凑型设计的情况下缩放到1 nm栅极长度时，将严格的高性能CMO在当前和有竞争力的能量播放性能上保持。动态掺杂的现场效应晶体管进一步介绍了超级刻度设备，尤其是2D材料中掺杂的大挑战。
Using accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10 nm scaling for high-performance CMOS applications. We show that a combination of good electrostatic control together with a high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10 nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge or III-V and dimensional scaling is expected to end around 12 nm gate-length. We demonstrate that using alternative 2D channel materials, such as the less explored HfS2 or ZrS2, high-drive current down to about 6 nm is, however, achievable. We also propose a novel transistor concept, the Dynamically-Doped Field-Effect Transistor, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to 1 nm gate length using a single-gate architecture and an ultra-compact design. The Dynamically-Doped Field-Effect Transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.
